Localized surface plasmon resonance on two-dimensional HfSe2 and ZrSe2
نویسندگان
چکیده
منابع مشابه
HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides
The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality "native" insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demons...
متن کاملHfSe2 and ZrSe2: Two-dimensional semiconductors with native high-k oxides
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. Department of Physics, Stanford University, Stanford, CA 94305, USA. Stanford Institute for Materials and Energy Sciences, Stanford Linear Accelerator Center National Accelerator Laboratory, Menlo Park, CA 94025, USA. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA. ...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2018
ISSN: 0268-1242,1361-6641
DOI: 10.1088/1361-6641/aae901